SUTSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
An objective of the present invention is to improve uniformity of the amount of etching of a pattern in a vertical direction. According to an embodiment, a substrate processing method includes an etching process, a temperature-difference forming process, and a rinsing process. In the etching process...
Saved in:
Main Authors | , , , |
---|---|
Format | Patent |
Language | English Korean |
Published |
05.07.2018
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | An objective of the present invention is to improve uniformity of the amount of etching of a pattern in a vertical direction. According to an embodiment, a substrate processing method includes an etching process, a temperature-difference forming process, and a rinsing process. In the etching process, an etchant is supplied onto a first surface of a substrate on which a pattern is formed to etch the pattern. In the temperature-difference forming process performed in parallel with the etching process, the temperature in a lower portion of the pattern is lower than the temperature in an upper portion of the pattern. In the rinsing process, a rinse liquid is supplied onto the first surface after the etching process to replace the etchant remaining on the pattern with the rinse liquid.
본 발명은 패턴의 상하 방향에 있어서의 에칭량의 균일성을 향상시키는 것을 과제로 한다. 실시형태에 따른 기판 처리 방법은, 에칭 공정과, 온도차 형성 공정과, 린스 공정을 포함한다. 에칭 공정은 제1 면에 패턴이 형성된 기판의 제1 면에 대하여 에칭액을 공급하여 패턴을 에칭한다. 온도차 형성 공정은 에칭 공정과 병행하여 행해지며, 패턴의 하부에 있어서의 온도를 패턴의 상부에 있어서의 온도보다 낮게 한다. 린스 공정은 에칭 공정 후의 제1 면에 대하여 린스액을 공급함으로써, 패턴에 잔존하는 에칭액을 린스액으로 치환한다. |
---|---|
AbstractList | An objective of the present invention is to improve uniformity of the amount of etching of a pattern in a vertical direction. According to an embodiment, a substrate processing method includes an etching process, a temperature-difference forming process, and a rinsing process. In the etching process, an etchant is supplied onto a first surface of a substrate on which a pattern is formed to etch the pattern. In the temperature-difference forming process performed in parallel with the etching process, the temperature in a lower portion of the pattern is lower than the temperature in an upper portion of the pattern. In the rinsing process, a rinse liquid is supplied onto the first surface after the etching process to replace the etchant remaining on the pattern with the rinse liquid.
본 발명은 패턴의 상하 방향에 있어서의 에칭량의 균일성을 향상시키는 것을 과제로 한다. 실시형태에 따른 기판 처리 방법은, 에칭 공정과, 온도차 형성 공정과, 린스 공정을 포함한다. 에칭 공정은 제1 면에 패턴이 형성된 기판의 제1 면에 대하여 에칭액을 공급하여 패턴을 에칭한다. 온도차 형성 공정은 에칭 공정과 병행하여 행해지며, 패턴의 하부에 있어서의 온도를 패턴의 상부에 있어서의 온도보다 낮게 한다. 린스 공정은 에칭 공정 후의 제1 면에 대하여 린스액을 공급함으로써, 패턴에 잔존하는 에칭액을 린스액으로 치환한다. |
Author | TACHIBANA KOUZOU TAKAHASHI SHUHEI YONEKAWA HIROKI NISHIMURA HIDEKI |
Author_xml | – fullname: YONEKAWA HIROKI – fullname: TAKAHASHI SHUHEI – fullname: NISHIMURA HIDEKI – fullname: TACHIBANA KOUZOU |
BookMark | eNrjYmDJy89L5WSwCw4NCQ4JcgxxVQgI8nd2DQ729HNX8HUN8fB3UXD0c1EIDnXClHcMCHAEioUG8zCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSSeO8gIwNDCwMDczNjAxNHY-JUAQBf_y1I |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | 기판 처리 방법 및 기판 처리 장치 |
ExternalDocumentID | KR20180076304A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_KR20180076304A3 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 14:39:50 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English Korean |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_KR20180076304A3 |
Notes | Application Number: KR20170173175 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180705&DB=EPODOC&CC=KR&NR=20180076304A |
ParticipantIDs | epo_espacenet_KR20180076304A |
PublicationCentury | 2000 |
PublicationDate | 20180705 |
PublicationDateYYYYMMDD | 2018-07-05 |
PublicationDate_xml | – month: 07 year: 2018 text: 20180705 day: 05 |
PublicationDecade | 2010 |
PublicationYear | 2018 |
RelatedCompanies | TOKYO ELECTRON LIMITED |
RelatedCompanies_xml | – name: TOKYO ELECTRON LIMITED |
Score | 3.133195 |
Snippet | An objective of the present invention is to improve uniformity of the amount of etching of a pattern in a vertical direction. According to an embodiment, a... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | SUTSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180705&DB=EPODOC&locale=&CC=KR&NR=20180076304A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR1dS8Mw8JhT1Dedih9TCkrfiqtptX0o0iatxdEPulb2NtYvEKUdruLf91I7HQh7S3IQLpfcZy4XgBt9dKdnSq5LBc9wVQrcC31UEknWeDE0NFBJygP6nn_vJsrzVJ324H31FqatE_rVFkdEjsqQ35tWXi_-glisza1c3qavOFQ_OrHBxM47ljU8warILMMOAxZQkVJjHIl-9ANDnx29d3MLtrkhzSvt2y8Wf5eyWFcqzgHshDhf1RxC760ewB5d_b02gF2vu_LGZsd9yyMe9Ij5H8exLYRRQLkg9J8Ez47dgAmmz4RJYv2Hm2Fo4lgyOYZrx46pKyEis991z8bROtbkBPpVXRWnIGgZKZVUTee5milITZ3M56hWSJnLDwRNhjMYbprpfDP4AvZ5t81JVYfQbz4-i0vUvE161RLsG0LZgDg |
link.rule.ids | 230,309,786,891,25594,76903 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQsTQwskw2SbHUTQWtcDVJBcaFpUGasa6hBegwNGAD1TgJNKDv62fmEWriFWEawcSQA9sLAz4ntBx8OCIwRyUD83sJuLwuQAxiuYDXVhbrJ2UChfLt3UJsXdSgvWNDC2AKNlVzcbJ1DfB38XdWc3a29Q5S8wuCyAH77MDeuyMzA6s5sFMI7iyFOYH2pRQgVypuggxsAUDz8kqEGJiy84UZOJ1hd68JM3D4Qqe8gUxo7isWAQ16hIDuOA5xVQgI8ncGFYR-7gq-riEe_i4Kjn4uCsGhTpjyjgEBjkCx0GBRBmU31xBnD12gQ-Lh_o73DkJ2tbEYA0tefl6qBIOCRbJxmkmSaVJiimmyCTA0LY0TE4HVinFaiqG5MbDJIMkgg88kKfzS8gycHiG-PvE-nn7e0gxcICnw-lRTGQaWkqLSVFlgLVySJAcOPABmW4Mi |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SUTSTRATE+PROCESSING+METHOD+AND+SUBSTRATE+PROCESSING+APPARATUS&rft.inventor=YONEKAWA+HIROKI&rft.inventor=TAKAHASHI+SHUHEI&rft.inventor=NISHIMURA+HIDEKI&rft.inventor=TACHIBANA+KOUZOU&rft.date=2018-07-05&rft.externalDBID=A&rft.externalDocID=KR20180076304A |