SURFACE TREATMENT METHOD AND SURFACE TREATMENT DEVICE

• Main Authors: INOUE HIROYUKI, HIRAMATSU SHINNICHI, YAMANISHI KAZUOMI, YAMAMOTO IZURU
• Format: Patent
• Language: English; Korean
• Published: 28.12.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided is a surface processing method for performing the surface processing of an object (P) by allowing a processing gas (G2) to come into contact with the heated object (P) and solidifying the element of the processing gas (G2). The object (P) is heated to an elevated temperature (T1) near a processing temperature (T3) for performing the surface treatment by heating the atmosphere where the object (P) is disposed. The surface processing is performed by allowing the processing gas to come into contact with the surface of the object (P) while directly heating the heated object (P) to the processing temperature (T3). Efficient surface processing can be performed. 가열된 강제의 피처리물(P)에 처리 가스(G2)를 접촉시켜, 처리 가스(G2)의 원소를 고용시킴으로써 피처리물(P)의 표면 처리를 행하는 표면 처리 방법이다. 피처리물(P)이 배치된 분위기를 가열함으로써, 표면 처리를 행하는 처리 온도(T3) 근방의 승온 온도(T1)까지, 피처리물(P)을 승온시킨다. 승온된 상태의 피처리물(P)을 처리 온도(T3)로 직접 가열하면서, 피처리물(P)의 표면에 처리 가스를 접촉시킴으로써, 표면 처리를 행한다.