CMOS IMPLEMENTING MAGNETIC MEMORY INTEGRATION WITH CMOS DRIVING CIRCUITS

The present invention provides a magnetic memory integrated with complementary metal oxide semiconductor (CMOS) driving circuits and a method for implementing a magnetic memory integrated with CMOS driving circuits used in a solid-state drive (SSD). The CMOS wafer is provided, and the magnetic memor...

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Bibliographic Details
Main Authors CHILDRESS JEFFERY ROBINSON, FRANCA NETO LUIZ M, BANDIC ZVONIMIR Z, KATINE JORDAN ASHER, ROBERTSON NEIL LESLIE
Format Patent
LanguageEnglish
Korean
Published 07.03.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:The present invention provides a magnetic memory integrated with complementary metal oxide semiconductor (CMOS) driving circuits and a method for implementing a magnetic memory integrated with CMOS driving circuits used in a solid-state drive (SSD). The CMOS wafer is provided, and the magnetic memory is formed on the top of the CMOS wafer providing a functioning magnetic memory chip. 상보적 금속 산화물 반도체(CMOS) 구동 회로들과 통합된 자기 메모리 및 고체 상태 드라이브(SSD)에서 이용하기 위한 상보적 금속 산화물 반도체(CMOS) 구동 회로들과 통합된 자기 메모리를 구현하기 위한 방법이 제공된다. 상보적 금속 산화물 반도체(CMOS) 웨이퍼가 제공되고, 자기 메모리는 기능 자기 메모리 칩을 제공하는 CMOS 웨이퍼의 최상단 상에 형성된다.
Bibliography:Application Number: KR20160108325