SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

The performance of the semiconductor device can be improved. An element isolation part STI has a protrusion part PJU protruding from an SOI substrate and touching a stacking layer PUL. And, the height of the upper surface of the protrusion part PJU is equal to or less than the height of the upper su...

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Bibliographic Details
Main Author ODA HIDEKAZU
Format Patent
LanguageEnglish
Korean
Published 20.02.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The performance of the semiconductor device can be improved. An element isolation part STI has a protrusion part PJU protruding from an SOI substrate and touching a stacking layer PUL. And, the height of the upper surface of the protrusion part PJU is equal to or less than the height of the upper surface of the stacking layer PUL, with reference to the surface of the silicon layer SIL of the SOI substrate. The height of the upper surface of the stacking layer PUL is not less than half the height of the stacking layer PUL. 반도체 장치의 성능 향상을 도모한다. 소자 분리부 STI는, SOI 기판으로부터 돌출되고, 또한, 쌓아올림층 PUL과 접촉하는 돌출부 PJU를 갖는다. 그리고, SOI 기판의 실리콘층 SIL의 표면을 기준으로 하여, 돌출부 PJU의 상면의 높이는, 쌓아올림층 PUL의 상면의 높이 이하이며, 또한, 쌓아올림층 PUL의 상면의 높이의 1/2 이상이도록 구성된다.
Bibliography:Application Number: KR20160100091