SURFACE REFORMING MATERIAL RESIST PATTERN FORMATION METHOD AND PATTERN FORMATION METHOD

• Main Authors: TSUCHIYA JUNICHI, HIRANO ISAO
• Format: Patent
• Language: English; Korean
• Published: 10.11.2016
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; THEIR PREPARATION OR CHEMICAL WORKING-UP

A surface reforming material containing an epoxy resin having a mass average molecular weight of 1,000 to 50,000 for forming a surface reforming layer formed between a support and a resist film; a method for forming a resist pattern comprising: a process of forming a surface reforming layer on the support by using the corresponding surface reforming material; a process of forming a resist film by using a resist composition on the support on which the surface reforming layer is formed; a process of exposing the resist film; and a process of alkali-developing the resist film to form a resist pattern; and a method for forming a pattern comprising a process of performing an etching process for the support in which the resist pattern is formed by a method of forming the resist pattern. 지지체와 레지스트막 사이에 형성되는 표면 개질층을 형성하기 위한, 질량 평균 분자량이 1000 ∼ 50000 인 에폭시 수지를 함유하는 표면 개질 재료 ; 지지체 상에, 당해 표면 개질 재료를 사용하여 표면 개질층을 형성하는 공정과, 상기 표면 개질층이 형성된 상기 지지체 상에, 레지스트 조성물을 사용하여 레지스트막을 형성하는 공정과, 상기 레지스트막을 노광하는 공정과, 상기 레지스트막을 알칼리 현상하여 레지스트 패턴을 형성하는 공정을 포함하는 레지스트 패턴 형성 방법 ; 및 상기 레지스트 패턴 형성 방법에 의해 레지스트 패턴이 형성된 지지체에 대하여 에칭 처리를 실시하는 공정을 포함하는 패턴 형성 방법.