SEMICONDUCTOR DIEVICES AND METHODS OF MANUFACTURING THE SAME

A semiconductor device and a manufacturing method thereof are provided. According to an embodiment, the manufacturing method of the semiconductor device comprises the following steps of: preparing a substrate having a protruding active pattern; forming a recess region in the active pattern by elimin...

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Main Authors KOO, BON YOUNG, YOO, JEONG HO, KIM, JIN BUM, YOON, JI EON, PARK, JAE YOUNG, LEE, DONG HUN, LEE, CHO EUN, LEE, KWAN HEUM
Format Patent
LanguageEnglish
Korean
Published 20.10.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device and a manufacturing method thereof are provided. According to an embodiment, the manufacturing method of the semiconductor device comprises the following steps of: preparing a substrate having a protruding active pattern; forming a recess region in the active pattern by eliminating a portion of the active pattern; forming source/drain patterns on the recess region of the active pattern wherein the source/drain patterns include silicon-germanium; and forming a capping pattern on the source/drain patterns. The step of forming the capping pattern can includes a step of eliminating the germanium included in the source/drain patterns. 반도체 소자 및 그 제조방법에 제공된다. 실시예들에 따른 반도체 소자 제조방법은 돌출된 활성 패턴을 갖는 기판을 준비하는 것; 상기 활성 패턴의 일부를 제거하여, 상기 활성 패턴에 리세스 영역을 형성하는 것; 상기 활성 패턴의 상기 리세스 영역 상에 소스/드레인 패턴을 형성하되, 상기 소스/드레인 패턴은 실리콘-게르마늄을 포함하는 것; 및 상기 소스/드레인 패턴 상에 캐핑 패턴을 형성하는 것을 포함할 수 있다. 상기 캐핑 패턴을 형성하는 것은 상기 소스/드레인 패턴에 포함된 게르마늄을 제거하는 것을 포함할 수 있다.
Bibliography:Application Number: KR20150050557