SEMICONDUCTOR DEVICE, METHODS OF FORMING PATTERNS FOR SEMICONDUCTOR DEVICE, AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

• Main Authors: YEO, KYOUNG HWAN, BAI, KEUN HEE, PARK, SEUNG JU, KIM, MYEONG CHEOL, PARK, KI BYUNG, KIM, DO HYOUNG, HA, SEUNG SEOK, KOO, JAE HYOUNG
• Format: Patent
• Language: English; Korean
• Published: 29.06.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided are a semiconductor device with an improved degree of integration, a method for forming a pattern of the semiconductor device, and a method for manufacturing the semiconductor device. According to an embodiment of the present invention, the semiconductor device comprises: a substrate having a plurality of active areas defined therein; a plurality of gate electrodes extended in a first direction by being crossed with a part of the active areas, and including first and second gate electrodes arranged to be adjacent to each other in the first direction; and a gate separation unit arranged between the first and second gate electrodes. The gate separation unit includes: a first layer; and a second layer arranged on both ends of the first layer in a second direction perpendicular to the first direction. 본 발명의 실시예에 따른 반도체 장치는, 복수의 활성 영역들이 정의된 기판, 복수의 활성 영역들 중 일부와 교차되며 제1 방향으로 연장되고, 제1 방향에서 서로 인접하게 배치되는 제1 및 제2 게이트 전극들을 포함하는 복수의 게이트 전극들, 제1 및 제2 게이트 전극들의 사이에 배치되는 게이트 분리부를 포함하고, 게이트 분리부는, 제1 층 및 제1 방향에 수직한 제2 방향에서 제1 층의 양단에 배치되는 제2 층을 포함한다.