SEMICONDUCTOR LIGHT EMITTING ELEMENT
A semiconductor light emitting element for preventing an increase in the thickness of a device includes a substrate, a first semiconductor layer, a second semiconductor layer, a first light emitting layer, a first conductivity layer, a third semiconductor layer, a fourth semiconductor layer, a secon...
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Main Authors | , , , , |
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Format | Patent |
Language | English Korean |
Published |
03.03.2016
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Abstract | A semiconductor light emitting element for preventing an increase in the thickness of a device includes a substrate, a first semiconductor layer, a second semiconductor layer, a first light emitting layer, a first conductivity layer, a third semiconductor layer, a fourth semiconductor layer, a second light emitting layer, a second conductivity layer, a first member, and a second member. The first member includes a first end part and a second end part. The first end part is located between the first substrate and the first conductive layer and is electrically connected to the first conductive layer. The second end part is not overlapped with the second conductive layer. The second member includes a third end part and a four end part. The third end part is located between the substrate and the second conductive layer and is electrically connected to the second conductive layer. The fourth end part is electrically connected to the second end part.
반도체 발광 소자는, 기체와, 제1 반도체층과, 제2 반도체층과, 제1 발광층과, 제1 도전층과, 제3 반도체층과, 제4 반도체층과, 제2 발광층과, 제2 도전층과, 제1 부재와, 제2 부재를 포함한다. 상기 제1 부재는, 제1 단부와 제2 단부를 포함한다. 상기 제1 단부는, 상기 기체와 상기 제1 도전층과의 사이에 위치하여 상기 제1 도전층과 전기적으로 접속되고, 상기 제2 단부는, 상기 제2 도전층과 겹치지 않는다. 상기 제2 부재는, 제3 단부와 제4 단부를 포함한다. 상기 제3 단부는, 상기 기체와 상기 제2 도전층과의 사이에 위치하여 상기 제2 도전층과 전기적으로 접속된다. 상기 제4 단부는, 상기 제2 단부와 전기적으로 접속된다. |
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AbstractList | A semiconductor light emitting element for preventing an increase in the thickness of a device includes a substrate, a first semiconductor layer, a second semiconductor layer, a first light emitting layer, a first conductivity layer, a third semiconductor layer, a fourth semiconductor layer, a second light emitting layer, a second conductivity layer, a first member, and a second member. The first member includes a first end part and a second end part. The first end part is located between the first substrate and the first conductive layer and is electrically connected to the first conductive layer. The second end part is not overlapped with the second conductive layer. The second member includes a third end part and a four end part. The third end part is located between the substrate and the second conductive layer and is electrically connected to the second conductive layer. The fourth end part is electrically connected to the second end part.
반도체 발광 소자는, 기체와, 제1 반도체층과, 제2 반도체층과, 제1 발광층과, 제1 도전층과, 제3 반도체층과, 제4 반도체층과, 제2 발광층과, 제2 도전층과, 제1 부재와, 제2 부재를 포함한다. 상기 제1 부재는, 제1 단부와 제2 단부를 포함한다. 상기 제1 단부는, 상기 기체와 상기 제1 도전층과의 사이에 위치하여 상기 제1 도전층과 전기적으로 접속되고, 상기 제2 단부는, 상기 제2 도전층과 겹치지 않는다. 상기 제2 부재는, 제3 단부와 제4 단부를 포함한다. 상기 제3 단부는, 상기 기체와 상기 제2 도전층과의 사이에 위치하여 상기 제2 도전층과 전기적으로 접속된다. 상기 제4 단부는, 상기 제2 단부와 전기적으로 접속된다. |
Author | ONO HIROSHI TAJIMA JUMPEI NUNOUE SHINYA UESUGI KENJIRO ITO TOSHIHIDE |
Author_xml | – fullname: ITO TOSHIHIDE – fullname: TAJIMA JUMPEI – fullname: UESUGI KENJIRO – fullname: ONO HIROSHI – fullname: NUNOUE SHINYA |
BookMark | eNrjYmDJy89L5WRQCXb19XT293MJdQ7xD1Lw8XT3CFEACoWEePq5K7j6uPq6-oXwMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JJ47yAjA0MzAwMjY1MzA0dj4lQBAASzJbk |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | 반도체 발광 소자 |
ExternalDocumentID | KR20160023560A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_KR20160023560A3 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 12:43:24 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English Korean |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_KR20160023560A3 |
Notes | Application Number: KR20150114560 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160303&DB=EPODOC&CC=KR&NR=20160023560A |
ParticipantIDs | epo_espacenet_KR20160023560A |
PublicationCentury | 2000 |
PublicationDate | 20160303 |
PublicationDateYYYYMMDD | 2016-03-03 |
PublicationDate_xml | – month: 03 year: 2016 text: 20160303 day: 03 |
PublicationDecade | 2010 |
PublicationYear | 2016 |
RelatedCompanies | KABUSHIKI KAISHA TOSHIBA |
RelatedCompanies_xml | – name: KABUSHIKI KAISHA TOSHIBA |
Score | 3.0051224 |
Snippet | A semiconductor light emitting element for preventing an increase in the thickness of a device includes a substrate, a first semiconductor layer, a second... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | SEMICONDUCTOR LIGHT EMITTING ELEMENT |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160303&DB=EPODOC&locale=&CC=KR&NR=20160023560A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQSbNMskxJMU3STQWt1zFJtDTUtTQyT9ZNMTMwAsqYmSSmgQb0ff3MPEJNvCJMI5gYcmB7YcDnhJaDD0cE5qhkYH4vAZfXBYhBLBfw2spi_aRMoFC-vVuIrYsatHcMujPZwFjNxcnWNcDfxd9ZzdnZ1jtIzS8IIgc628XMwJGZgRXUkAadtO8a5gTal1KAXKm4CTKwBQDNyysRYmDKzhdm4HSG3b0mzMDhC53yBjKhua9YhEElGBRo_n4uoc4h_kEKPp7uHiEKQKGQEE8_dwVXH_DB_KIMym6uIc4eukDr4uG-i_cOQnabsRgDC7DfnyrBoJBoYJaWnGqRmpYMOjUw1TzJIsUkzdIkMQmYJ42TUi0kGWTwmSSFX1qagQvEBS-nMpZhYCkpKk2VBdavJUly4GABADrUekM |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_mFOebTsWPqQVH34p17dr1oYjrx1r7NWomeytNm4IobriK_75J7HRPewt3cEkOLpdL7n4H0K8MbJTlEEuE5euouXEvGQO9kEpNHlCOpuYVe9CPYs2bqU_z4bwF7-taGI4T-s3BEalFFdTea35eL_8fsWyeW7m6w6-UtHhwkWmLTXTMeibLimiPTWea2IklWpYZpGKc_vIYtosmP-7Ars7wednl6WXM6lKWm07FPYS9KZX3UR9B623RhY617r3Whf2o-fKmw8b6VsfQf2ZKS2J7ZqEkFUJ_4iGBkhDy44nghByY_wRuXQdZnkSny_52lwXp5tqUU2jTuJ-cgZDLWlWQEakKhhpIdDwq1cpQc0xtUsFkdA69bZIutrNvoOOhKMxCPw4u4YCxeGqV0oN2_flFrqivrfE1V9EPGrh9MA |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SEMICONDUCTOR+LIGHT+EMITTING+ELEMENT&rft.inventor=ITO+TOSHIHIDE&rft.inventor=TAJIMA+JUMPEI&rft.inventor=UESUGI+KENJIRO&rft.inventor=ONO+HIROSHI&rft.inventor=NUNOUE+SHINYA&rft.date=2016-03-03&rft.externalDBID=A&rft.externalDocID=KR20160023560A |