PLATING METHOD
A copper electroplating bath having a surface tension of 40 mN/m is suitable for filling a via with copper, wherein such copper deposit is substantially void-free and free of surface defects. A method for filling a via in an electronic device with copper comprises: providing an acidic copper electro...
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Main Authors | , , , , , |
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Format | Patent |
Language | English Korean |
Published |
07.01.2016
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Subjects | |
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Abstract | A copper electroplating bath having a surface tension of 40 mN/m is suitable for filling a via with copper, wherein such copper deposit is substantially void-free and free of surface defects. A method for filling a via in an electronic device with copper comprises: providing an acidic copper electroplating bath which includes a source of a copper ion, an acid electrolyte, a halide ion source, an accelerator, a leveler, and a suppressor, and has a dynamic surface tension of 40 mN/m or less; providing an electronic device substrate as a cathode which has one or more vias to be filled with copper, and has a conductive surface; connecting the electronic device substrate to the copper electroplating bath; and applying a potential for a period of time sufficient to fill the via with a copper deposit.
표면 장력이 40 mn/m인 구리 전기도금조는, 구리 침착물에 실질적으로 보이드가 없고 실질적으로 표면 결함 없이, 비아를 구리로 충전하는데 적합하다. |
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AbstractList | A copper electroplating bath having a surface tension of 40 mN/m is suitable for filling a via with copper, wherein such copper deposit is substantially void-free and free of surface defects. A method for filling a via in an electronic device with copper comprises: providing an acidic copper electroplating bath which includes a source of a copper ion, an acid electrolyte, a halide ion source, an accelerator, a leveler, and a suppressor, and has a dynamic surface tension of 40 mN/m or less; providing an electronic device substrate as a cathode which has one or more vias to be filled with copper, and has a conductive surface; connecting the electronic device substrate to the copper electroplating bath; and applying a potential for a period of time sufficient to fill the via with a copper deposit.
표면 장력이 40 mn/m인 구리 전기도금조는, 구리 침착물에 실질적으로 보이드가 없고 실질적으로 표면 결함 없이, 비아를 구리로 충전하는데 적합하다. |
Author | LIEB BRYAN HAZEBROUCK REBECCA LEA LEFEBVRE MARK GOMEZ LUIS A THORSETH MATTHEW A SCALISI MARK A |
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SubjectTerms | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY PRINTED CIRCUITS PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES |
Title | PLATING METHOD |
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