PLATING METHOD

A copper electroplating bath having a surface tension of 40 mN/m is suitable for filling a via with copper, wherein such copper deposit is substantially void-free and free of surface defects. A method for filling a via in an electronic device with copper comprises: providing an acidic copper electro...

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Main Authors GOMEZ LUIS A, SCALISI MARK A, LIEB BRYAN, HAZEBROUCK REBECCA LEA, THORSETH MATTHEW A, LEFEBVRE MARK
Format Patent
LanguageEnglish
Korean
Published 07.01.2016
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Abstract A copper electroplating bath having a surface tension of 40 mN/m is suitable for filling a via with copper, wherein such copper deposit is substantially void-free and free of surface defects. A method for filling a via in an electronic device with copper comprises: providing an acidic copper electroplating bath which includes a source of a copper ion, an acid electrolyte, a halide ion source, an accelerator, a leveler, and a suppressor, and has a dynamic surface tension of 40 mN/m or less; providing an electronic device substrate as a cathode which has one or more vias to be filled with copper, and has a conductive surface; connecting the electronic device substrate to the copper electroplating bath; and applying a potential for a period of time sufficient to fill the via with a copper deposit. 표면 장력이 40 mn/m인 구리 전기도금조는, 구리 침착물에 실질적으로 보이드가 없고 실질적으로 표면 결함 없이, 비아를 구리로 충전하는데 적합하다.
AbstractList A copper electroplating bath having a surface tension of 40 mN/m is suitable for filling a via with copper, wherein such copper deposit is substantially void-free and free of surface defects. A method for filling a via in an electronic device with copper comprises: providing an acidic copper electroplating bath which includes a source of a copper ion, an acid electrolyte, a halide ion source, an accelerator, a leveler, and a suppressor, and has a dynamic surface tension of 40 mN/m or less; providing an electronic device substrate as a cathode which has one or more vias to be filled with copper, and has a conductive surface; connecting the electronic device substrate to the copper electroplating bath; and applying a potential for a period of time sufficient to fill the via with a copper deposit. 표면 장력이 40 mn/m인 구리 전기도금조는, 구리 침착물에 실질적으로 보이드가 없고 실질적으로 표면 결함 없이, 비아를 구리로 충전하는데 적합하다.
Author LIEB BRYAN
HAZEBROUCK REBECCA LEA
LEFEBVRE MARK
GOMEZ LUIS A
THORSETH MATTHEW A
SCALISI MARK A
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Snippet A copper electroplating bath having a surface tension of 40 mN/m is suitable for filling a via with copper, wherein such copper deposit is substantially...
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SubjectTerms APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
METALLURGY
PRINTED CIRCUITS
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
SEMICONDUCTOR DEVICES
Title PLATING METHOD
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