COMBINATION FINFET AND METHODS OF FORMING SAME

A Fin field effect transistor in an embodiment includes a semiconductor substrate and a fin extended upward from a gate stack. The fin includes a channel area. The gate stack is arranged on the side wall of the channel area, and covers the side wall of the channel area. The channel area includes at...

Full description

Saved in:
Bibliographic Details
Main Authors TSAI MING HUAN, PERNG TSU HSIU, LEE TUNG YING, WANN CLEMENT HSINGJEN, HUANG YU LIEN
Format Patent
LanguageEnglish
Korean
Published 01.10.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A Fin field effect transistor in an embodiment includes a semiconductor substrate and a fin extended upward from a gate stack. The fin includes a channel area. The gate stack is arranged on the side wall of the channel area, and covers the side wall of the channel area. The channel area includes at least two different semiconductor materials. 실시형태 핀 전계 효과 트랜지스터는반도체 기판과 게이트 스택으로부터 상방으로 연장되는 핀을 포함한다. 핀은 채널 영역을 포함한다. 게이트 스택은 채널 영역의 측벽 위에 배치되어 채널 영역의 측벽을 커버한다. 채널 영역은 적어도 2개의 상이한 반도체 물질을 포함한다.
Bibliography:Application Number: KR20140184228