CARBON DOPANT GAS AND CO-FLOW FOR IMPLANT BEAM AND SOURCE LIFE PERFORMANCE IMPROVEMENT

Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cle...

Full description

Saved in:
Bibliographic Details
Main Authors YEDAVE SHARAD N, CHAMBERS BARRY LEWIS, TANG YING, STURM EDWARD A, BYL OLEG, SWEENEY JOSEPH D, SERGI STEVEN G
Format Patent
LanguageEnglish
Korean
Published 19.11.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

Abstract Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.
AbstractList Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.
Author SWEENEY JOSEPH D
SERGI STEVEN G
TANG YING
CHAMBERS BARRY LEWIS
BYL OLEG
YEDAVE SHARAD N
STURM EDWARD A
Author_xml – fullname: YEDAVE SHARAD N
– fullname: CHAMBERS BARRY LEWIS
– fullname: TANG YING
– fullname: STURM EDWARD A
– fullname: BYL OLEG
– fullname: SWEENEY JOSEPH D
– fullname: SERGI STEVEN G
BookMark eNrjYmDJy89L5WQIc3YMcvL3U3DxD3D0C1FwdwxWcPRzUXD213Xz8Q9XcPMPUvD0DfAByTm5OvqCJYP9Q4OcXRV8PN1cFQJcg4BqfB39gAJAhUH-Ya6-rn4hPAysaYk5xam8UJqbQdnNNcTZQze1ID8-tbggMTk1L7Uk3jvIyMDQxMDQ2NjU3NDRmDhVAEBaMso
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID KR20140133571A
GroupedDBID EVB
ID FETCH-epo_espacenet_KR20140133571A3
IEDL.DBID EVB
IngestDate Fri Jul 19 15:13:10 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
Korean
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_KR20140133571A3
Notes Application Number: KR20147025467
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20141119&DB=EPODOC&CC=KR&NR=20140133571A
ParticipantIDs epo_espacenet_KR20140133571A
PublicationCentury 2000
PublicationDate 20141119
PublicationDateYYYYMMDD 2014-11-19
PublicationDate_xml – month: 11
  year: 2014
  text: 20141119
  day: 19
PublicationDecade 2010
PublicationYear 2014
RelatedCompanies ADVANCED TECHNOLOGY MATERIALS INC
RelatedCompanies_xml – name: ADVANCED TECHNOLOGY MATERIALS INC
Score 2.922486
Snippet Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title CARBON DOPANT GAS AND CO-FLOW FOR IMPLANT BEAM AND SOURCE LIFE PERFORMANCE IMPROVEMENT
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20141119&DB=EPODOC&locale=&CC=KR&NR=20140133571A
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT4MwEL_MadQ3nRo_pmmi4Y04hBV5WAwUcHODEvbh3hZASIxmLA7jv--12XRPe2t7l6Zt8uvdtf1dAe4Eu9Ok1qNaUGqoRoIxa0q1TE1orudZatCCCqJwENLu2HiZtqc1-FxzYWSe0B-ZHBERlSHeK7lfL_4PsVz5tnJ5n75jU_nkjzqusoqONQOhaymu0_Ei7nKmMNbpx0oYSxl6O3rb1Owd2EVH2hR48CaO4KUsNo2KfwR7EfY3r46h9lE24ICt_15rwH6wuvLG4gp9yxOYMDt2eEhcHtnhiDzbQ2KHLmFc9Qf8lWA8R3pBNBAyx7MDKRzyccw8Muj5Hom8GHUC8R2NUIz5RKbyP4Vb3xuxrooDnP2tx6wfb85GP4P6vJzn50AMPckzE0OoLGkZaVtL0TwXrYcsLwr6ZtHiAprberrcLr6CQ1EVRDzNakK9-vrOr9EiV-mNXMhfXcmG3Q
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3PT8IwFH5BNOJNUeMP1Caa3RaZK507ELN1myDbuoyB3Mg2t8RogMiM_75tA8qJW9PvpWmbfH19bb9XgDuh7jSI-aiWhGAVpzxmzYiWqykp9CLPMCmJEAoHIemN8MukM6nB51oLI_OE_sjkiJxROed7Jdfrxf8hliPfVi7vs3deNX_ykq6jrKJjDXPqmopjd92IOYwqlHYHsRLGEuO7Hb1jaNYO7PJNtiH44I5toUtZbDoV7xD2It7erDqC2se8CQ26_nutCfvB6sqbF1fsWx7DmFqxzULksMgKE_RsDZEVOogy1fPZK-LxHOoHkS8w27UCCQ7ZKKYu8vueiyI35jaB-I5GGMZsLFP5n8Ct5ya0p_IOTv_mYzqIN0ejn0J9Np8VZ4Cwnha5wUOoPG3jrKNl3D2X7Ye8KEvyZpLyHFrbWrrYDt9Ao5cE_tTvh4NLOBCQEOVpZgvq1dd3ccW9c5Vdy0n9Bd16idA
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=CARBON+DOPANT+GAS+AND+CO-FLOW+FOR+IMPLANT+BEAM+AND+SOURCE+LIFE+PERFORMANCE+IMPROVEMENT&rft.inventor=YEDAVE+SHARAD+N&rft.inventor=CHAMBERS+BARRY+LEWIS&rft.inventor=TANG+YING&rft.inventor=STURM+EDWARD+A&rft.inventor=BYL+OLEG&rft.inventor=SWEENEY+JOSEPH+D&rft.inventor=SERGI+STEVEN+G&rft.date=2014-11-19&rft.externalDBID=A&rft.externalDocID=KR20140133571A