A METHOD OF CONDUCTING A DIRECTION-SPECIFIC TRIMMING PROCESS FOR CONTACT PATTERNING

The present invention provides a method for manufacturing a semiconductor device. A first layer is formed over a substrate. A patterned second layer is then formed over the first layer. The patterned second layer includes an opening. A spacer material is then deposited in the opening, thereby downsi...

Full description

Saved in:
Bibliographic Details
Main Authors TSAI CHIA SHIUNG, LIU SHIH CHANG, LIU MING CHYI
Format Patent
LanguageEnglish
Korean
Published 24.09.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The present invention provides a method for manufacturing a semiconductor device. A first layer is formed over a substrate. A patterned second layer is then formed over the first layer. The patterned second layer includes an opening. A spacer material is then deposited in the opening, thereby downsizing the opening in a plurality of directions. A direction-specific trimming process is performed on the spacer material and the second layer. Thereafter, the first layer is patterned with the second layer.
Bibliography:Application Number: KR20130155287