SILICON ON INSULATOR ETCH
A method etching features through a stack of a silicon nitride layer over a silicon layer over a silicon oxide layer in a plasma processing chamber is provided. The silicon nitride layer is etched in the plasma processing chamber, comprising; flowing a silicon nitride etch gas; forming the silicon n...
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Main Authors | , , , , |
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Format | Patent |
Language | English Korean |
Published |
01.09.2014
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Subjects | |
Online Access | Get full text |
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