SILICON ON INSULATOR ETCH

A method etching features through a stack of a silicon nitride layer over a silicon layer over a silicon oxide layer in a plasma processing chamber is provided. The silicon nitride layer is etched in the plasma processing chamber, comprising; flowing a silicon nitride etch gas; forming the silicon n...

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Bibliographic Details
Main Authors ROBSON MARK TODHUNTER, BOWERS JAMES R, AUDREY CHARLES, LI SIYI, HEFTY ROBERT
Format Patent
LanguageEnglish
Korean
Published 01.09.2014
Subjects
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