SILICON ON INSULATOR ETCH
A method etching features through a stack of a silicon nitride layer over a silicon layer over a silicon oxide layer in a plasma processing chamber is provided. The silicon nitride layer is etched in the plasma processing chamber, comprising; flowing a silicon nitride etch gas; forming the silicon n...
Saved in:
Main Authors | , , , , |
---|---|
Format | Patent |
Language | English Korean |
Published |
01.09.2014
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | A method etching features through a stack of a silicon nitride layer over a silicon layer over a silicon oxide layer in a plasma processing chamber is provided. The silicon nitride layer is etched in the plasma processing chamber, comprising; flowing a silicon nitride etch gas; forming the silicon nitride etch gas into a plasma to etch the silicon nitride layer, and stopping the flow of the silicon nitride etch gas. The silicon layer is, comprising flowing a silicon etch gas, wherein the silicon etch gas comprises SF6 or SiF4, forming the silicon etch gas into a, and stopping the flow of the silicon etch gas. The silicon oxide layer is etched in the plasma processing chamber, comprising flowing a silicon oxide etch gas, forming the silicon oxide etch gas into a plasma, and stopping the flow of the silicon oxide etch gas. |
---|---|
AbstractList | A method etching features through a stack of a silicon nitride layer over a silicon layer over a silicon oxide layer in a plasma processing chamber is provided. The silicon nitride layer is etched in the plasma processing chamber, comprising; flowing a silicon nitride etch gas; forming the silicon nitride etch gas into a plasma to etch the silicon nitride layer, and stopping the flow of the silicon nitride etch gas. The silicon layer is, comprising flowing a silicon etch gas, wherein the silicon etch gas comprises SF6 or SiF4, forming the silicon etch gas into a, and stopping the flow of the silicon etch gas. The silicon oxide layer is etched in the plasma processing chamber, comprising flowing a silicon oxide etch gas, forming the silicon oxide etch gas into a plasma, and stopping the flow of the silicon oxide etch gas. |
Author | ROBSON MARK TODHUNTER BOWERS JAMES R LI SIYI HEFTY ROBERT AUDREY CHARLES |
Author_xml | – fullname: ROBSON MARK TODHUNTER – fullname: BOWERS JAMES R – fullname: AUDREY CHARLES – fullname: LI SIYI – fullname: HEFTY ROBERT |
BookMark | eNrjYmDJy89L5WSQDPb08XT291MAIk-_4FAfxxD_IAXXEGcPHgbWtMSc4lReKM3NoOwGEtdNLciPTy0uSExOzUstifcOMjIwNDEwNDA1NTN3NCZOFQBkUyKL |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
ExternalDocumentID | KR20140105567A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_KR20140105567A3 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 15:11:20 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English Korean |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_KR20140105567A3 |
Notes | Application Number: KR20147019392 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140901&DB=EPODOC&CC=KR&NR=20140105567A |
ParticipantIDs | epo_espacenet_KR20140105567A |
PublicationCentury | 2000 |
PublicationDate | 20140901 |
PublicationDateYYYYMMDD | 2014-09-01 |
PublicationDate_xml | – month: 09 year: 2014 text: 20140901 day: 01 |
PublicationDecade | 2010 |
PublicationYear | 2014 |
RelatedCompanies | LAM RESEARCH CORPORATION |
RelatedCompanies_xml | – name: LAM RESEARCH CORPORATION |
Score | 2.93084 |
Snippet | A method etching features through a stack of a silicon nitride layer over a silicon layer over a silicon oxide layer in a plasma processing chamber is... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | SILICON ON INSULATOR ETCH |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140901&DB=EPODOC&locale=&CC=KR&NR=20140105567A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQsUwyMTdKMzbTTUxNttQ1MUk10LUwMTLUTbRIMTROMk8xS0wCjUP6-pl5hJp4RZhGMDHkwPbCgM8JLQcfjgjMUcnA_F4CLq8LEINYLuC1lcX6SZlAoXx7txBbFzVo7xh0ehOwb-ziZOsa4O_i76zm7GzrHaTmFwSRA18Gae7IzMAKakiDTtp3DXMC7UspQK5U3AQZ2AKA5uWVCDEwZecLM3A6w-5eE2bg8IVOeQOZ0NxXLMIgGezp4-ns76cARMBOd6iPY4h_kIJriLOHKIOyG4jWBdoRD_dSvHcQsoOMxRhYgJ39VAkGBdMUwyTLZGBAWaZYmCQZmyclgjowlsnAhlWaeWpqsiSDDD6TpPBLSzNwgbiQNVIyDCwlRaWpssBKtSRJDhwWAGG_dqY |
link.rule.ids | 230,309,786,891,25594,76903 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQsUwyMTdKMzbTTUxNttQ1MUk10LUwMTLUTbRIMTROMk8xS0wCjUP6-pl5hJp4RZhGMDHkwPbCgM8JLQcfjgjMUcnA_F4CLq8LEINYLuC1lcX6SZlAoXx7txBbFzVo7xh0ehOwb-ziZOsa4O_i76zm7GzrHaTmFwSRA18Gae7IzMBqDuwUgjtLYU6gfSkFyJWKmyADWwDQvLwSIQam7HxhBk5n2N1rwgwcvtApbyATmvuKRRgkgz19PJ39_RSACNjpDvVxDPEPUnANcfYQZVB2A9G6QDvi4V6K9w5CdpCxGAMLsLOfKsGgYJpimGSZDAwoyxQLkyRj86REUAfGMhnYsEozT01NlmSQwWeSFH5peQZOjxBfn3gfTz9vaQYukBRkvZQMA0tJUWmqLLCCLUmSA4cLABKxeZA |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SILICON+ON+INSULATOR+ETCH&rft.inventor=ROBSON+MARK+TODHUNTER&rft.inventor=BOWERS+JAMES+R&rft.inventor=AUDREY+CHARLES&rft.inventor=LI+SIYI&rft.inventor=HEFTY+ROBERT&rft.date=2014-09-01&rft.externalDBID=A&rft.externalDocID=KR20140105567A |