PRECURSORS FOR SILICON DIOXIDE GAP FILL

A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconduct...

Full description

Saved in:
Bibliographic Details
Main Authors ROEDER JEFFREY F, HUNKS WILLIAM, XU CHONGYING, BILODEAU STEVEN M, LI WEIMIN, HENDRIX BRYAN C
Format Patent
LanguageEnglish
Korean
Published 25.08.2014
Subjects
ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
ORGANIC CHEMISTRY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.
Bibliography:Application Number: KR20147021868