SILICON PART FOR PLASMA ETCHING APPARATUS AND METHOD OF PRODUCING THE SAME

• Main Authors: KIKUCHI FUMITAKE, NAKADA YOSHINOBU
• Format: Patent
• Language: English; Korean
• Published: 07.07.2014
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY; CHEMISTRY; COMPOUNDS THEREOF; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; THEIR RELEVANT APPARATUS; TRANSPORTING

The present invention relates to a silicon member material for a plasma etching device, which is capable of preventing the generation of a particle and being not damaged by plasma etching at an early stage even when being disposed inside a reaction chamber of the plasma etching device; and to a method for producing a silicon member for a plasma etching device. The silicon member for a plasma etching device is used in a reaction chamber of the plasma etching device, and comprises any one of polycrystalline silicon, mono-like silicon, and single crystalline silicon. Boron in the range of 1 × 10^18 to 1 × 10^20 atoms/cc inclusive is contained as a dopant.