SILICON PART FOR PLASMA ETCHING APPARATUS AND METHOD OF PRODUCING THE SAME

The present invention relates to a silicon member material for a plasma etching device, which is capable of preventing the generation of a particle and being not damaged by plasma etching at an early stage even when being disposed inside a reaction chamber of the plasma etching device; and to a meth...

Full description

Saved in:
Bibliographic Details
Main Authors KIKUCHI FUMITAKE, NAKADA YOSHINOBU
Format Patent
LanguageEnglish
Korean
Published 07.07.2014
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY
CHEMISTRY
COMPOUNDS THEREOF
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PERFORMING OPERATIONS
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
THEIR RELEVANT APPARATUS
TRANSPORTING
Online AccessGet full text

Cover

More Information
Summary:The present invention relates to a silicon member material for a plasma etching device, which is capable of preventing the generation of a particle and being not damaged by plasma etching at an early stage even when being disposed inside a reaction chamber of the plasma etching device; and to a method for producing a silicon member for a plasma etching device. The silicon member for a plasma etching device is used in a reaction chamber of the plasma etching device, and comprises any one of polycrystalline silicon, mono-like silicon, and single crystalline silicon. Boron in the range of 1 × 10^18 to 1 × 10^20 atoms/cc inclusive is contained as a dopant.
Bibliography:Application Number: KR20130164138