HIGH DENSITY INTERCONNECT DEVICE AND METHOD

• Main Authors: ROY MIHIR K, MANUSHAROW MATHEW J
• Format: Patent
• Language: English; Korean
• Published: 30.06.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided are embodiments allowing both of high density and low density interconnection between a micro-electronic die and a mother board through a direct chip attach (DCA). According to an embodiment, high-density interconnection is provided with small bump pitches located along one edge in the micro-electronic die, and low-density interconnection is provided with a larger bump pitch located at different regions. The high density interconnection regions between dies are connected with each other through an interconnection bridge made of a material, such as silicon, to support high density interconnection formed in the bridge. The lower density interconnection regions are used to directly attach the dies, which are interconnected, to the board by using the DCA. The high density interconnection allows a higher interval on the circuit board. When the dies are interconnected with each other through the interconnection bridge, a present controlled collapsed chip connection (C4) interval can be used.