COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FOR MANUFACTURING THE SAME

A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conducti...

Full description

Saved in:
Bibliographic Details
Main Authors YI, SUNG SOO, ROMANO LINDA, CHANG YING LAN, SVENSSON PATRIK, KRYLIOUK OLGA
Format Patent
LanguageEnglish
Korean
Published 10.06.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

Abstract A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids.
AbstractList A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids.
Author CHANG YING LAN
ROMANO LINDA
SVENSSON PATRIK
YI, SUNG SOO
KRYLIOUK OLGA
Author_xml – fullname: YI, SUNG SOO
– fullname: ROMANO LINDA
– fullname: CHANG YING LAN
– fullname: SVENSSON PATRIK
– fullname: KRYLIOUK OLGA
BookMark eNqNjLsKwjAUQDPo4OsfLjgLsSqdL8mtCbYJJLd2cChF4iRtof4_KvgBTmc55yzFrB_6tBA35bGkqEiDQ-cbGwgih1pxHShCY9mAdUwhsmWLJVy91RHQaaiIjddQ-AAVurrAb2PdGdh8HljRWswf3XNKmx9XYlsQK7NL49CmaezuqU-v9hIyuT9KmctTnuHhP-sNyxU08Q
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID KR20140070572A
GroupedDBID EVB
ID FETCH-epo_espacenet_KR20140070572A3
IEDL.DBID EVB
IngestDate Fri Jul 19 15:19:39 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
Korean
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_KR20140070572A3
Notes Application Number: KR20147008339
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140610&DB=EPODOC&CC=KR&NR=20140070572A
ParticipantIDs epo_espacenet_KR20140070572A
PublicationCentury 2000
PublicationDate 20140610
PublicationDateYYYYMMDD 2014-06-10
PublicationDate_xml – month: 06
  year: 2014
  text: 20140610
  day: 10
PublicationDecade 2010
PublicationYear 2014
RelatedCompanies GLO AB
RelatedCompanies_xml – name: GLO AB
Score 2.9194224
Snippet A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FOR MANUFACTURING THE SAME
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140610&DB=EPODOC&locale=&CC=KR&NR=20140070572A
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8gGvVNUeMHmiaavS2WbTB4IKa0xU3YRrbykfhAtgGJ0QCRGf992wnKE29tL720l16v1979CvCAJ7aRmoYKasdYV_6XntRwXU-TiTGLzXqczlSCs-fXnL71MqqOCvCxyYXJcUK_c3BEqVGp1Pcs36-X_5dYLI-tXD0mb7Jp8dQWTaatveOKMk9YY60m7wUsoBqlzU6o-eEvTS7vqm2QPdhXB2mFtM8HLZWXstw2Ku0TOOhJfvPsFArvixIc0c3fayU49NZP3rK41r7VGbzSgHR5RDlDPvGDoRtyFImwT1XoQoSGrnBQDnEbCVe4pIsGgcsiRHyGPC6cgCHp8iGP-P02UX1c_xkJR_IgHj-H-zYX1NHlKMd_Qhl3wu0pmRdQnC_m00tAVtVIGhUpZkshy9hmY2bjeGpO0rSeYCu2r6C8i9P1bvINHKuqCpaq4DIUs8-v6a00y1lyl0vzB6xOiF0
link.rule.ids 230,309,786,891,25594,76906
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8gGvFNUeMHahPN3hbHNhg8EFPa4SZbR7bykfhAtgGJ0QCRGf992wnKE29NL72sl16vt_7uV4AHbWLpqaFLULumqTL_UpO61lDTZKLPYqMRpzNZ4OyzutM3X0a1UQE-NrUwOU_od06OKDwqFf6e5fv18v8nFs2xlavH5E10LZ46vEWVdXZcleFJU2i7ZfcCGhCFkFY3VFj4KxPLu2bpeA_2LcnPKw9Pg7asS1luB5XOMRz0hL55dgKF90UZSmTz9loZDv31lbdorr1vdQqvJMCeHRGbIoZZMHRDG0U87BMJXYjQ0OUOyiluI-5yF3toELg0QphR5NvcCSgSKR_yMet3sBzjsmfEHaED-_YZ3HdsThxVfOX4zyjjbrg9JeMcivPFfHoByKzpSbMqzGxKZhnLaM4sLZ4akzRtJJoZW5dQ2aXparf4DkoO972x57LuNRxJkQROVbUKFLPPr-mNCNFZcptb9gc2KotK
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=COALESCED+NANOWIRE+STRUCTURES+WITH+INTERSTITIAL+VOIDS+AND+METHOD+FOR+MANUFACTURING+THE+SAME&rft.inventor=YI%2C+SUNG+SOO&rft.inventor=ROMANO+LINDA&rft.inventor=CHANG+YING+LAN&rft.inventor=SVENSSON+PATRIK&rft.inventor=KRYLIOUK+OLGA&rft.date=2014-06-10&rft.externalDBID=A&rft.externalDocID=KR20140070572A