POLYMER HAVING IMPROVED STABILITY OF STORAGE FOR CARBON HARD MASK AND CARBON HARD MASK COMPOSITION INCLUDING SAME, METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE USING SAME

A polymer for a carbon hard mask and a carbon hard mask manufactured with a composition comprising the same of the present invention can provide a pattern which is not affected by a standing wave by absorbing light while forming a photoresist pattern. The composition for the carbon hard mask of the...

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Bibliographic Details
Main Authors HEO, JI HYUN, KWON, EUN MI, YOO, TAE WOOK, KIM, JEONG MI, KIM, SAM MIN, SON, KYUNG CHUL
Format Patent
LanguageEnglish
Korean
Published 26.05.2014
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A polymer for a carbon hard mask and a carbon hard mask manufactured with a composition comprising the same of the present invention can provide a pattern which is not affected by a standing wave by absorbing light while forming a photoresist pattern. The composition for the carbon hard mask of the present invention also applies using a spin coater and has excellent long-term storage properties as particles are not precipitated during a long-term storage due to having excellent storage.
Bibliography:Application Number: KR20120128317