METHOD AND APPARATUS FOR PRODUCING A SINGLE CRYSTAL

• Main Authors: LOBMEYER JOSEF, HOLZINGER ALFRED, RAMING GEORG, ALTMANNSHOFER LUDWIG, RATNIEKS GUNDARS, LANDRICHINGER JOHANN
• Format: Patent
• Language: English; Korean
• Published: 01.07.2013
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PURPOSE: A method and an apparatus for producing a single crystal are provided to reduce the load of a single crystal and the curvature of a crystallization boundary due to a thermal stress. CONSTITUTION: A single crystal (1) is grown between a crystallization boundary (2) and a melting zone of a molten material (3). An RF inductor (4) heats the melting zone. The crystallization heat generated in a single crystal growth process is emitted through the lateral surface (5) of the single crystal. A heater (6) directly heats the single crystal. The heater is arranged on a reflector (8).