A SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF FORMING THE SAME

PURPOSE: A semiconductor memory device and a forming method thereof are provided to prevent a bowing phenomenon by including germanium oxide in a support pattern. CONSTITUTION: A storage node(250) is arranged on a substrate. A capacitor dielectric layer(260) surrounds the storage node. An electrode...

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Main Authors KIM, HYONG SOO, HONG, EUN KEE, HWANG, KWANG TAE
Format Patent
LanguageEnglish
Korean
Published 08.05.2013
Subjects
ELECTRICITY
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Abstract PURPOSE: A semiconductor memory device and a forming method thereof are provided to prevent a bowing phenomenon by including germanium oxide in a support pattern. CONSTITUTION: A storage node(250) is arranged on a substrate. A capacitor dielectric layer(260) surrounds the storage node. An electrode layer(270) covers the storage node and the capacitor dielectric layer. One or more support patterns(220,240) support the storage node. The support pattern includes germanium oxide.
AbstractList PURPOSE: A semiconductor memory device and a forming method thereof are provided to prevent a bowing phenomenon by including germanium oxide in a support pattern. CONSTITUTION: A storage node(250) is arranged on a substrate. A capacitor dielectric layer(260) surrounds the storage node. An electrode layer(270) covers the storage node and the capacitor dielectric layer. One or more support patterns(220,240) support the storage node. The support pattern includes germanium oxide.
Author HONG, EUN KEE
HWANG, KWANG TAE
KIM, HYONG SOO
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Snippet PURPOSE: A semiconductor memory device and a forming method thereof are provided to prevent a bowing phenomenon by including germanium oxide in a support...
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Title A SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF FORMING THE SAME
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