NON-VOLATILE MEMORY DEVICE HAVING RESISTANCE CHANGEABLE ELEMENT AND METHOD OF FORMING THE SAME

PURPOSE: A non-volatile memory device with a resistance changeable element and a manufacturing method thereof are provided to prevent the characteristic degradation of the resistance changeable element by selectively removing sacrificial films between molding films. CONSTITUTION: A lower molding fil...

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Bibliographic Details
Main Authors CHAE, SOO DOO, KIM, SUN JUNG, JU, HYUN SU
Format Patent
LanguageEnglish
Korean
Published 12.12.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A non-volatile memory device with a resistance changeable element and a manufacturing method thereof are provided to prevent the characteristic degradation of the resistance changeable element by selectively removing sacrificial films between molding films. CONSTITUTION: A lower molding film is formed on a substrate(11). A first horizontal wiring is formed on the lower molding film. An upper molding film is formed on the first horizontal wiring. A pillar vertically passes through the upper molding film, the first horizontal wiring and the lower molding film. The pillar is located in the same level as the first horizontal wiring.
Bibliography:Application Number: KR20110054072