LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

PURPOSE: A light emitting device and a manufacturing method thereof are provided to easily manufacture a light emitting device having improved luminous efficiency with a cheap process by constituting at least one of first and second conductive semiconductors with a material of ZnO series and forming...

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Main Authors YOO, KYUNG HO, SONE, CHEOL SOO, HWANG, SUNG WON, SUNG, YOUNG KYU, SHIN, YUN HEE
Format Patent
LanguageEnglish
Korean
Published 10.05.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract PURPOSE: A light emitting device and a manufacturing method thereof are provided to easily manufacture a light emitting device having improved luminous efficiency with a cheap process by constituting at least one of first and second conductive semiconductors with a material of ZnO series and forming a light emitting layer to include graphene. CONSTITUTION: A first conductive semiconductor layer(20) is formed on a substrate(10). A light emitting layer(30) including graphene is formed on the first conductive semiconductor layer. A second conductive semiconductor layer(40) is formed on the light emitting layer. A second electrode is formed on the second conductive semiconductor layer. A first electrode is formed in an exposed region of the first conductive semiconductor layer.
AbstractList PURPOSE: A light emitting device and a manufacturing method thereof are provided to easily manufacture a light emitting device having improved luminous efficiency with a cheap process by constituting at least one of first and second conductive semiconductors with a material of ZnO series and forming a light emitting layer to include graphene. CONSTITUTION: A first conductive semiconductor layer(20) is formed on a substrate(10). A light emitting layer(30) including graphene is formed on the first conductive semiconductor layer. A second conductive semiconductor layer(40) is formed on the light emitting layer. A second electrode is formed on the second conductive semiconductor layer. A first electrode is formed in an exposed region of the first conductive semiconductor layer.
Author SUNG, YOUNG KYU
SONE, CHEOL SOO
HWANG, SUNG WON
YOO, KYUNG HO
SHIN, YUN HEE
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
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