UNDER BUMP METALLIZATION FOR ON-DIE CAPACITOR

A method of manufacturing a capacitor in a semiconductor chip; the semiconductor chip manufactured with this method. The method comprises forming a first conductor structure on a semiconductor chip to serve as a first capacitor plate, the first conductor structure including a layer, the layer having...

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Bibliographic Details
Main Authors MCLELLAN NEIL, GUO FEI, CHUNG DANIEL, CHEUNG TERENCE
Format Patent
LanguageEnglish
Korean
Published 26.04.2011
Subjects
BASIC ELECTRIC ELEMENTS
CAPACITORS
CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a capacitor in a semiconductor chip; the semiconductor chip manufactured with this method. The method comprises forming a first conductor structure on a semiconductor chip to serve as a first capacitor plate, the first conductor structure including a layer, the layer having a first plurality of commonly tied lines, forming a passivation structure on the first conductor structure, forming a first under bump metallization structure on the passivation structure overlapping at least a portion of the first plurality of commonly tied lines to serve as a second capacitor plate, and applying a polymer layer to the under bump metallization structure to provide structural protection for the under bump metallization structure.
Bibliography:Application Number: KR20117004569