HIGH VOLTAGE SENSOR DEVICE AND METHOD THEREFOR

PURPOSE: A high voltage sensor device and a method thereof are provided to detect the high voltage value on the semiconductor device by comprising the high voltage detection component forming the detection signal representing the high voltage. CONSTITUTION: A high voltage semiconductor device(10) co...

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Bibliographic Details
Main Authors OIKAWA KAZUNORI, QUDDUS MOHAMMED TANVIR, HALL JEFFERSON W, BURTON RICHARD S, CHANG GEORGE
Format Patent
LanguageEnglish
Korean
Published 06.04.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A high voltage sensor device and a method thereof are provided to detect the high voltage value on the semiconductor device by comprising the high voltage detection component forming the detection signal representing the high voltage. CONSTITUTION: A high voltage semiconductor device(10) comprises a high voltage detection component(11) for forming the detection signal. The high voltage detection component comprises a JFET transistor(18) and a metal oxide semiconductor transistor(19). The high voltage semiconductor device comprises a bias resistor(21) which is formed to offer the bias currents to a transistor gate.
Bibliography:Application Number: KR20100026593