METAL GATE INTEGRATION STRUCTURE AND METHOD INCLUDING METAL FUSE, ANTI-FUSE AND/OR RESISTOR

• Main Authors: KOTHANDARAMAN CHANDRASEKHARAN, SAFRAN JOHN M, HE ZHONG XIANG, RASSEL ROBERT M, KIM DEOK KEE, ROBSON NORMAN W, YAN HONGWEN, WANG PING CHUAN, COOLBAUGH DOUGLAS, MOY DAN, ESHUN EBENEZER E, STEIN KENNETH J, HO HERBERT L, GEBRESELASIE EPHREM G
• Format: Patent
• Language: English; Korean
• Published: 18.02.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device located and formed upon an active region of a semiconductor substrate and at least one of a fuse structure, an anti-fuse structure and a resistor structure located and formed at least in part simultaneously upon an isolation region laterally separated from the active region within the semiconductor substrate. The field effect device includes a gate dielectric comprising a high dielectric constant dielectric material and a gate electrode comprising a metal material. The at least one of the fuse structure, anti-fuse structure and resistor structure includes a pad dielectric comprising the same material as the gate dielectric, and optionally, also a fuse, anti-fuse or resistor that may comprise the same metal material as the gate electrode.