NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME
PURPOSE: A nonvolatile memory device and a manufacturing method of the same are provided to form junction areas having various depths by forming a barrier dummy pattern as well as a driving gate around a semiconductor substrate. CONSTITUTION: A semiconductor substrate(101) comprises a cell array reg...
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Format | Patent |
Language | English Korean |
Published |
03.12.2010
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Subjects | |
Online Access | Get full text |
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Abstract | PURPOSE: A nonvolatile memory device and a manufacturing method of the same are provided to form junction areas having various depths by forming a barrier dummy pattern as well as a driving gate around a semiconductor substrate. CONSTITUTION: A semiconductor substrate(101) comprises a cell array region and a peripheral area. A first gate pattern(G) is formed around a semiconductor substrate. The first gate pattern comprises a first pattern(G1) and a second pattern(G2) on both sides of the first pattern. The gate pattern is formed on the cell array of the semiconductor substrate. The second gate pattern includes a drain select gate, a source select gate and a cell gate. |
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AbstractList | PURPOSE: A nonvolatile memory device and a manufacturing method of the same are provided to form junction areas having various depths by forming a barrier dummy pattern as well as a driving gate around a semiconductor substrate. CONSTITUTION: A semiconductor substrate(101) comprises a cell array region and a peripheral area. A first gate pattern(G) is formed around a semiconductor substrate. The first gate pattern comprises a first pattern(G1) and a second pattern(G2) on both sides of the first pattern. The gate pattern is formed on the cell array of the semiconductor substrate. The second gate pattern includes a drain select gate, a source select gate and a cell gate. |
Author | NOH, JAE YOON |
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Notes | Application Number: KR20090045402 |
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RelatedCompanies | HYNIX SEMICONDUCTOR INC |
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Snippet | PURPOSE: A nonvolatile memory device and a manufacturing method of the same are provided to form junction areas having various depths by forming a barrier... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME |
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