THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF

• Main Authors: LEE, HEE HWAN, HAM, YEON SIK, JEON, YEON MUN, SEONG, DONG GI, OH, KEUN CHAN, KIM, KANG WOO, JEONG, YOUN HAK
• Format: Patent
• Language: English; Korean
• Published: 04.06.2010
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PURPOSE: A thin film transistor array panel simplifying a process and a manufacturing method thereof are provided to form a light blocking layer and change thickness of color filters in a reflection area and transmission area, thereby uniformly maintaining color reproduction according to an optical path. CONSTITUTION: A light blocking layer(220) has the first transmitting window(80a). A reflecting layer(192) is formed on the light blocking layer. The reflective film has the second transmitting window(80b). The second transmitting window is overlapped with the first transmitting window. Color filters(230) are formed on the reflecting layer. A pixel electrode(191) is formed on the color filters. The pixel electrode is overlapped with the second transmitting window. The reflective film comprises an uneven portion corresponding to a part of a pixel area.