NON-VOLATILE MEMORY DEVICE AND METHOD AT THE SAME

PURPOSE: A non-volatile memory device and a manufacturing method thereof are provided to improve productivity by forming a protrusion plug formed by a rapid thermal annealing method on a contact plug exposed by an interlayer insulating film. CONSTITUTION: A transistor is formed on a substrate(10). A...

Full description

Saved in:
Bibliographic Details
Main Authors JUNG, JU YOUNG, HONG, CHANG KI, KIM, IK SOO, CHOI, SUK HUN
Format Patent
LanguageEnglish
Korean
Published 10.03.2010
Subjects
ELECTRICITY
Online AccessGet full text

Cover

Be the first to leave a comment!
You must be logged in first