ATOMIC LAYER DEPOSITION APPARATUS

An atomic layer deposition apparatus is provided to prevent partial degradation of the evaporated film on wafer by using an active gas. The substrate(200) is arranged in the substrate pedestal. The first gas service pipe(110) is arranged in one side of the substrate pedestal. The source gas is suppl...

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Bibliographic Details
Main Authors FUKUMAKI NAOMI, IINO TOMOHISA, KATO YOSHITAKE
Format Patent
LanguageEnglish
Korean
Published 02.09.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An atomic layer deposition apparatus is provided to prevent partial degradation of the evaporated film on wafer by using an active gas. The substrate(200) is arranged in the substrate pedestal. The first gas service pipe(110) is arranged in one side of the substrate pedestal. The source gas is supplied from one end to the other end. The second gas service pipe(120) is arranged in one side of the substrate pedestal. The active gas is supplied from one end to the other end. The active gas is the layer of the evaporated material of the source gas of the substrate. The second gas service pipe includes a plurality of gas blowing openings(122) for the processed substrate.
Bibliography:Application Number: KR20090014327