ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS

Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well...

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Main Authors STENDER MATTHIAS, ROEDER JEFFREY F, HUNKS WILLIAM, XU CHONGYING, CHEN PHILIP S. H, PETRUSKA MELISSA A, STAUF GREGORY T, BAUM THOMAS H, CHEN TIANNIU, HENDRIX BRYAN C
Format Patent
LanguageEnglish
Published 26.08.2009
Subjects
ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
ORGANIC CHEMISTRY
SEMICONDUCTOR DEVICES
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Summary:Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films. ® KIPO & WIPO 2009
Bibliography:Application Number: KR20097005811