PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL

• Main Authors: UEMATSU KOJI, MIYANAGA MICHIMASA, TANIZAKI KEISUKE, NAKAHATA SEIJI, MIZUHARA NAHO, OKAHISA TAKUJI, NAKAHATA HIDEAKI
• Format: Patent
• Language: English; Korean
• Published: 30.07.2009
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A process for producing a Group III element nitride crystal (20) having a main plane (20m) orienting in any specific direction other than {0001}. The process comprises: a step in which Group III element nitride crystal substrates (10p) and (10q) respectively having main planes (10pm) and (10qm) orienting in the specific direction are cut out of a Group III element nitride bulk crystal (1); a step in which these substrates (10p) and (10q) are closely arranged side by side so that the main planes (10pm) and (10qm) of these substrates (10p) and (10q) are parallel to each other and their planes facing [0001] are oriented in the same direction; and a step in which a Group III element nitride crystal (20) is grown on the main planes (10pm) and (10qm) of these substrates (10p) and (10q).