LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

A light emitting diode and manufacturing method thereof are provided to minimize the coefficient of thermal expansion between a sacrificial substrate and a bearing substrate and to prevent the deformation of the supporting substrate. The light emitting diode comprises a supporting substrate(51), and...

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Bibliographic Details
Main Authors YOON, YEO JIN, KIM, CHANG YOUN, SEO, WON CHEOL
Format Patent
LanguageEnglish
Korean
Published 02.07.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A light emitting diode and manufacturing method thereof are provided to minimize the coefficient of thermal expansion between a sacrificial substrate and a bearing substrate and to prevent the deformation of the supporting substrate. The light emitting diode comprises a supporting substrate(51), and a semiconductor layer(30) and a metal pattern(40). The semiconductor layer is arranged on the supporting substrate. The semiconductor layer is grown up on the sacrificial substrate. The sacrificial substrate is made of the same material as the supporting substrate. The semiconductor layer has a bottom conductive layer(29a), and an active layer(27a) and a top semiconductor layer(25a). The conductivity of the bottom half conductive layer is different from the conductivity of the top semiconductor layer. The metal pattern is arranged between the supporting substrate and the semiconductor layer.
Bibliography:Application Number: KR20080131071