NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT

• Main Authors: CHOI, BYUNG GIL, CHO, BEAK HYUNG
• Format: Patent
• Language: English
• Published: 02.07.2008
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A nonvolatile memory device using a variable resistive element is provided to reduce the area of a core architecture by sharing a global bit line with a plurality of memory banks. A number of memory banks(110_1-110_8) include a number of nonvolatile memory cells including a variable resistive elemen...