NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT

• Main Authors: CHOI, BYUNG GIL, CHO, BEAK HYUNG
• Format: Patent
• Language: English
• Published: 02.07.2008
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A nonvolatile memory device using a variable resistive element is provided to reduce the area of a core architecture by sharing a global bit line with a plurality of memory banks. A number of memory banks(110_1-110_8) include a number of nonvolatile memory cells including a variable resistive element with different resistance level according to data stored in each memory bank. A number of global bit lines(GBL0-GBLn+1) are arranged to be shared by the memory banks. Each of a number of main word lines is arranged in one memory bank. The global bit line includes a write global bit line used in writing data in the memory banks and a read global bit line used in reading data from the memory banks.