SILICON WAFER AND PROCESS FOR THE HEAT TREATMENT OF A SILICON WAFER

• Main Authors: MESSMANN KLAUS, STUDENER JOHANNES, DAUB ERICH, KROTTENTHALER PETER, PASSEK FRIEDRICH, MUELLER TIMO, WAHLICH REINHOLD, VON AMMON WILFRIED, KUEHHORN ARNOLD
• Format: Patent
• Language: English
• Published: 28.09.2006
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; METALLURGY; PERFORMING OPERATIONS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TRANSPORTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm−3, a cumulative length of linear slippages 3 cm and a cumulative area of areal slippage regions 7 cm2, the front surface having <45 nitrogen-induced defects of >0.13 μm LSE in the DNN channel, a layer at least 5 μm thick, in which 1·104 COPs/cm3 with a size of 0.09 μm occur, and a BMD-free layer 5 μm thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.