PHOTORESIST COMPOSITION

PURPOSE: A microelectronic device substrate, a method for forming a photoresist relief image, a photoresist composition and a product having a layer of the photoresist composition are provided, to obtain a novel photoresist which is suitable for short wavelength imaging at a wavelength less than 300...

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Bibliographic Details
Main Authors TENG GARY GANGHUI, TAYLOR GARY N
Format Patent
LanguageEnglish
Korean
Published 07.01.2004
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A microelectronic device substrate, a method for forming a photoresist relief image, a photoresist composition and a product having a layer of the photoresist composition are provided, to obtain a novel photoresist which is suitable for short wavelength imaging at a wavelength less than 300 nm and less than 200 nm and to improve remarkably adhesion on a SiON layer and other inorganic surface layers. CONSTITUTION: The photoresist composition comprises a photoacid-labile polymer, a photoacid generator compound and a component containing an adhesion-improving moiety. The microelectronic device substrate comprises a silicon oxynitride layer; and a photoresist composition coated layer which comprises a photoacid-labile polymer, a photoacid generator compound and a component containing an adhesion-improving moiety. Preferably the adhesion-improving moiety comprises at least one epoxy group or cyclic nitrogen component; the photoacid-labile polymer is substituted with fluorine, and/or contains a photoacid-labile ester or acetal group.
Bibliography:Application Number: KR20030012747