THIN FILM MAGNETIC MEMORY DEVICE FOR WRITING DATA OF A PLURALITY OF BITS IN PARALLEL

• Main Author: OOISHI TSUKASA
• Format: Patent
• Language: English; Korean
• Published: 27.06.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

PURPOSE: To provide an MRAM device into which write data having a plurality of bits are written in parallel with low power consumption. CONSTITUTION: A bit line BL and a current feedback wiring RL are arranged for each memory cell column. A plurality of selection bit lines selected to respectively w...