METHOD FOR ROUGHENING A SURFACE OF A SEMICONDUCTOR SUBSTRATE

PURPOSE: A method for roughening the surface of a semiconductor substrate is provided to facilitate high capacitance by roughening the surface of the substrate so that the surface area of a storage capacitor is broadened to embody the storage capacitor with minimum capacitance. CONSTITUTION: The sem...

Full description

Saved in:
Bibliographic Details
Main Authors GOLDBACH MATTHIAS, CAPPELLANI ANNALISA
Format Patent
LanguageEnglish
Korean
Published 17.03.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE: A method for roughening the surface of a semiconductor substrate is provided to facilitate high capacitance by roughening the surface of the substrate so that the surface area of a storage capacitor is broadened to embody the storage capacitor with minimum capacitance. CONSTITUTION: The semiconductor substrate(5) having a surface(10) is arranged in a furnace. Oxygen and inert gas like argon or nitrogen are introduced into the furnace, maintaining the oxygen concentration in the furnace below 10 percent. The substrate is annealed at a temperature above 950 deg.C and mesopores(15) are formed in the surface of the semiconductor substrate. 표면(10)을 포함하는 반도체 기판(5)이 노(furnace) 내에 배치된다. 산소 및 아르곤 또는 질소와 같은 불활성 기체가 노 내로 유입되고, 여기서 상기 노 내의 상기 산소 농도는 10% 이하로 유지된다. 상기 기판(5)은 950℃를 넘는 온도에서 어닐링되고 메조포어들(15)은 상기 반도체 기판(5)의 상기 표면(10) 내에서 형성된다.
Bibliography:Application Number: KR20020049662