Novel Tetrahydrofuran Compounds Having Alicyclic Structure

PURPOSE: To provide a tetrahydrofuran compound which, when polymerized, gives a polymer used for preparing a resist material which is sensitive to a high-energy ray, excellent in sensitivity, resolution, and etching resistance, and useful for fine processing, especially a resist material which hardl...

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Main Authors KINSHO TAKESHI, WATANABE TAKERU, HASEGAWA KOJI
Format Patent
LanguageEnglish
Korean
Published 19.10.2002
Edition7
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Abstract PURPOSE: To provide a tetrahydrofuran compound which, when polymerized, gives a polymer used for preparing a resist material which is sensitive to a high-energy ray, excellent in sensitivity, resolution, and etching resistance, and useful for fine processing, especially a resist material which hardly absorbs light of an ArF excimer laser or a KrF excimer laser, is excellent in adhesion to a substrate, hence can easily form a minute pattern vertical to the substrate, and is suitable as a minute-pattern forming material for producing a VLSI. CONSTITUTION: This tetrahydrofuran compound is represented by formula (1) (wherein the broken line indicates a single bond, a divalent organic group or a structure wherein a tetrahydrofuran structure and an alicyclic structure being norbornene or tetracyclo£4.4.0.1¬2,¬5.1¬7,¬10|dodecene jointly have one or two constituting carbon atoms; and k is 0 or 1). 본 발명은 하기 화학식 1로 표시되는 테트라히드로푸란 화합물에 관한 것이다. 또한, 본 발명의 테트라히드로푸란 화합물을 중합함으로써 얻어지는 중합체를 사용하여 제조된 레지스트 재료는 고에너지선에 감응하고, 감도, 해상성, 에칭 내성이 우수하여 전자선 및 원자외선에 의한 미세 가공에 유용하다. 특히, ArF 엑시머 레이저, KrF 엑시머 레이저의 노광 파장에서의 흡수가 작고, 동시에 기판 밀착성이 우수하기 때문에 미세하면서 나아가 기판에 대하여 수직인 패턴을 쉽게 형성할 수 있어 초 LSI 제조용의 미세 패턴 형성 재료로서 바람직하다. 식 중, 점선은 단결합 또는 2가의 유기기를 나타내거나, 또는 노르보르넨 또는 테트라시클로[4.4.0.1.1]도데센인 지환 구조와 테트라히드로푸란환 구조가 1개 또는 2개의 구성 탄소 원자를 공유하는 구조를 나타내며, k는 0 또는 1이다.
AbstractList PURPOSE: To provide a tetrahydrofuran compound which, when polymerized, gives a polymer used for preparing a resist material which is sensitive to a high-energy ray, excellent in sensitivity, resolution, and etching resistance, and useful for fine processing, especially a resist material which hardly absorbs light of an ArF excimer laser or a KrF excimer laser, is excellent in adhesion to a substrate, hence can easily form a minute pattern vertical to the substrate, and is suitable as a minute-pattern forming material for producing a VLSI. CONSTITUTION: This tetrahydrofuran compound is represented by formula (1) (wherein the broken line indicates a single bond, a divalent organic group or a structure wherein a tetrahydrofuran structure and an alicyclic structure being norbornene or tetracyclo£4.4.0.1¬2,¬5.1¬7,¬10|dodecene jointly have one or two constituting carbon atoms; and k is 0 or 1). 본 발명은 하기 화학식 1로 표시되는 테트라히드로푸란 화합물에 관한 것이다. 또한, 본 발명의 테트라히드로푸란 화합물을 중합함으로써 얻어지는 중합체를 사용하여 제조된 레지스트 재료는 고에너지선에 감응하고, 감도, 해상성, 에칭 내성이 우수하여 전자선 및 원자외선에 의한 미세 가공에 유용하다. 특히, ArF 엑시머 레이저, KrF 엑시머 레이저의 노광 파장에서의 흡수가 작고, 동시에 기판 밀착성이 우수하기 때문에 미세하면서 나아가 기판에 대하여 수직인 패턴을 쉽게 형성할 수 있어 초 LSI 제조용의 미세 패턴 형성 재료로서 바람직하다. 식 중, 점선은 단결합 또는 2가의 유기기를 나타내거나, 또는 노르보르넨 또는 테트라시클로[4.4.0.1.1]도데센인 지환 구조와 테트라히드로푸란환 구조가 1개 또는 2개의 구성 탄소 원자를 공유하는 구조를 나타내며, k는 0 또는 1이다.
Author WATANABE TAKERU
KINSHO TAKESHI
HASEGAWA KOJI
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DocumentTitleAlternate 지환 구조를 포함하는 신규 테트라히드로푸란 화합물
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Snippet PURPOSE: To provide a tetrahydrofuran compound which, when polymerized, gives a polymer used for preparing a resist material which is sensitive to a...
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SubjectTerms APPARATUS SPECIALLY ADAPTED THEREFOR
CHEMISTRY
CINEMATOGRAPHY
COMPOSITIONS BASED THEREON
ELECTROGRAPHY
HETEROCYCLIC COMPOUNDS
HOLOGRAPHY
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
MATERIALS THEREFOR
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ORGANIC MACROMOLECULAR COMPOUNDS
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Title Novel Tetrahydrofuran Compounds Having Alicyclic Structure
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