Process for fabricating vertical transistors

• Main Authors: WEBER GARY ROBERT, HERGENROTHER JOHN MICHAEL, MONROE DONALD P
• Format: Patent
• Language: English; Korean
• Published: 16.04.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A process for manufacturing a vertical metal oxide semiconductor field effect transistor(vertical MOSFET) is provided to manufacture more efficiently. CONSTITUTION: The process for fabricating a vertical transistor includes the steps of forming a first device region selected from the group...