METHOD FOR FILMING TUNGSTEN FILM

• Main Authors: ISHIZUKA HOTAKA, TACHIBANA MITSUHIRO
• Format: Patent
• Language: English
• Published: 25.07.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE: A filming method of tungsten film is provided to enlarge a particle diameter of a tungsten crystalline particle(grain) or to reduce a non-resistant value by being the whole flux of gas per 1minute over 100% of a processing container capacity. CONSTITUTION: A nuclear crystalline(48) of tungsten is grown on a surface of a processed body under a filming gas contained a tungsten element. The processed body is exposed under a gas contained a boron for a short time. A tungsten film(50) is formed by growing the nuclear crystalline(48) under the filming gas, a hydrogen gas and the gas contained the boron of hydrogen dilution. When a diborane gas of 5% hydrogen dilution is used as the gas contained the boron, its flux is over 0.58% for the whole flux of gas. A thickness of the nuclear crystalline layer is under 50nm in the growing process of nuclear crystalline. The whole flux of each gas per 1minute is set over 100% of a capacity of a processing container in a vacuum processor in the filming process of tungsten.