NONVOLATILE MEMORY DEVICE AND METHOD THEREOF

• Main Authors: CHOE, JUNG HYUK, KIM, JONG HAN
• Format: Patent
• Language: English; Korean
• Published: 07.02.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A nonvolatile memory device and manufacturing method thereof are provided to decrease a number of common source line necessary to total cell array region by using a source pad line. CONSTITUTION: The memory device comprises a plurality of active regions(105) defined by a plurality of isolat...