COPPER CONTINUOUS DEPOSITION SOURCE

• Main Authors: MYUNG HYUN SIK, LEE JONG GEUN, JEONG YON GAB, LEE KYO WUNG, KIM SUNG IL
• Format: Patent
• Language: English; Korean
• Published: 25.07.2023
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a continuous copper deposition source capable of continuously and stably evaporating copper at high speed when performing a copper deposition process. The continuous copper deposition source according to the present invention comprises: a substrate made of a conductive heat-generating material; a buffer layer formed on the substrate; and a metal layer formed on the buffer layer. The metal layer is made of at least one selected from the group of at least one metal having a higher melting point than copper (hereinafter referred to as a first metal group). The buffer layer is formed including at least one carbide selected from the first metal group. 본 발명은 구리 증착 공정을 수행함에 있어서, 연속적이면서 안정적으로 구리를 고속 증발시킬 수 있는 구리 연속 증착 소스에 관한 것이다. 본 발명에 따른 구리 연속 증착 소스는, 도전성 발열 재질의 기재; 상기 기재 상에 형성되는 버퍼층; 및 상기 버퍼층 상에 형성되는 금속층;을 포함한다. 그리고, 상기 금속층은, 구리보다 융점이 높은 1종 이상의 금속군(이하, '제1 금속군'이라 칭함)으로부터 선택되는 적어도 어느 하나로 형성된다. 그리고, 상기 버퍼층은, 상기 제1 금속군으로부터 선택되는 적어도 어느 하나의 탄화물을 포함하여 형성된다.