EMBEDDED METAL HEAT SINK FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

An embedded metal heat sink for semiconductor device and a method for manufacturing the same are provided to connect an anode or a cathode with an external circuit by using at least one bonding pad as a transition electrode. A thin metal layer(114) includes a first surface and a second surface oppos...

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Bibliographic Details
Main Authors KUAN CHUN CHEN, JIN QUAN HUANG, YAN KUIN SU, SHU KAI HU, CHUN LIANG LIN
Format Patent
LanguageEnglish
Published 21.12.2007
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An embedded metal heat sink for semiconductor device and a method for manufacturing the same are provided to connect an anode or a cathode with an external circuit by using at least one bonding pad as a transition electrode. A thin metal layer(114) includes a first surface and a second surface opposite to the first surface. One or more semiconductor devices include two electrodes(110,112) having different kinds of polarity. The semiconductor device is mounted in the first surface. A metal heat-sink(122) is formed on the second surface of the thin metal layer. A bonding pad(134) is formed on the first surface of the thin metal layer around the semiconductor device. The electrodes correspond to the two bonding pads. The electrodes are electrically connected to the corresponding bonding pads by using two wires(136,138). The bonding pads are electrically to external circuits.
Bibliography:Application Number: KR20060101985