A METHOD FOR FORMING A MASK PATTERN OF A SEMICONDUCTOR DEVICE

A method for forming a mask pattern of a semiconductor device is provided to correct distortion of patterns due to optical proximity effect by using MDP(Mask Data Processing). A database of a design pattern is verified by using a design rule checker(S120). A first mask data process is performed to c...

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Bibliographic Details
Main Authors YUN, IN SOO, CHO, GAB HWAN
Format Patent
LanguageEnglish
Published 22.02.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for forming a mask pattern of a semiconductor device is provided to correct distortion of patterns due to optical proximity effect by using MDP(Mask Data Processing). A database of a design pattern is verified by using a design rule checker(S120). A first mask data process is performed to change the verified design pattern(S130). A model base OPC(Optical Proximity Correction) process is performed on the mask pattern after the first mask data process(S140). A correction process is performed by performing an optical rule checking process(S150). A mask data process is performed to correct a result value of a weak part after the optical rule checking process(S160).
Bibliography:Application Number: KR20050115440