POLYSILICON THIN-FILM TRANSISTOR USING SILICIDE AND MANUFACTURING METHOD THEREOF

• Main Authors: LEE, JUNG-HA, RYU, JAE-IL, JANG, JIN
• Format: Patent
• Language: English
• Published: 15.04.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A polysilicon thin film transistor using a silicide and a fabrication method thereof are provided to simplify the fabrication process and to improve the process yield. CONSTITUTION: The transistor includes a polysilicon layer(11) formed on an insulating substrate(10), and a gate insulating layer(13) formed on a channel region of the polysilicon layer(11). In addition, a heavily doped semiconductor layer(16) is formed on the gate insulating layer(13) and an exposed portion of the polysilicon layer(11). Next, a nickel silicide layer(12) is formed on the heavily doped semiconductor layer(16) by sputtering. The heavily doped semiconductor layer(16) and the nickel silicide layer(12) constitute not only a gate electrode(14) on the gate insulating layer(13) but also a source/drain region(15) on the exposed portion of the polysilicon layer(11) in a self-aligned manner. The gate insulating layer(13) and the overlying semiconductor layer(16) prevent ion impurities from being implanted into the channel region in the polysilicon layer(11) without the formation of a typical ion stopper.