PROCESS FOR PRODUCING SINGLE CRYSTAL OF POTASSIUM NIOBATE

본 발명에 의하면 포타시움 니오베이트의 단결정의 한 C-평면상에 반절연물질층을 통해 또는 직접 양전극을 그리고 포타시움 니오베이트의 단결정의 다른 C-평면상에 반절연물질층을 통해 음전극을 배치하는 단계를 포함하며, 상기 양전극과 음전극은 서로 대향배치되며, 포타시움 니오베이트의 단결정을 폴링하여 싱글도메인상태로 반전시키도록 양전극과 음전극간에 전압을 걸어서 품질저하없이 포타시움 니오베이트의 단결정의 전 영역을 폴링하는 단계를 포함하는 포타시움 니오베이트의 단결정을 제조하는 방법이 제공된다. There has been provided...

Full description

Saved in:
Bibliographic Details
Main Authors TAKEMURA, SHUJI, YAMADA, KAZUHIRO, MORI, HIROSHI
Format Patent
LanguageEnglish
Korean
Published 25.04.1998
Edition6
Subjects
Online AccessGet full text

Cover

Loading…
Abstract 본 발명에 의하면 포타시움 니오베이트의 단결정의 한 C-평면상에 반절연물질층을 통해 또는 직접 양전극을 그리고 포타시움 니오베이트의 단결정의 다른 C-평면상에 반절연물질층을 통해 음전극을 배치하는 단계를 포함하며, 상기 양전극과 음전극은 서로 대향배치되며, 포타시움 니오베이트의 단결정을 폴링하여 싱글도메인상태로 반전시키도록 양전극과 음전극간에 전압을 걸어서 품질저하없이 포타시움 니오베이트의 단결정의 전 영역을 폴링하는 단계를 포함하는 포타시움 니오베이트의 단결정을 제조하는 방법이 제공된다. There has been provided by the present invention a process for producing a single crystal of potassium niobate which comprises disposing a positive electrode directly or via a semi-insulating substance layer on one c-plane of a single crystal of potassium niobate and also a negative electrode via a semi-insulating substance layer on the other c-plane of the single crystal of potassium niobate, said positive and negative electrodes being disposed in mutually facing relationship, and applying voltage between the positive and negative electrodes so as to poll (convert to the single-domain state) the single crystal of potassium niobate, and which enables to poll the entire region of the single crystal of potassium niobate without quality deterioration.
AbstractList 본 발명에 의하면 포타시움 니오베이트의 단결정의 한 C-평면상에 반절연물질층을 통해 또는 직접 양전극을 그리고 포타시움 니오베이트의 단결정의 다른 C-평면상에 반절연물질층을 통해 음전극을 배치하는 단계를 포함하며, 상기 양전극과 음전극은 서로 대향배치되며, 포타시움 니오베이트의 단결정을 폴링하여 싱글도메인상태로 반전시키도록 양전극과 음전극간에 전압을 걸어서 품질저하없이 포타시움 니오베이트의 단결정의 전 영역을 폴링하는 단계를 포함하는 포타시움 니오베이트의 단결정을 제조하는 방법이 제공된다. There has been provided by the present invention a process for producing a single crystal of potassium niobate which comprises disposing a positive electrode directly or via a semi-insulating substance layer on one c-plane of a single crystal of potassium niobate and also a negative electrode via a semi-insulating substance layer on the other c-plane of the single crystal of potassium niobate, said positive and negative electrodes being disposed in mutually facing relationship, and applying voltage between the positive and negative electrodes so as to poll (convert to the single-domain state) the single crystal of potassium niobate, and which enables to poll the entire region of the single crystal of potassium niobate without quality deterioration.
Author TAKEMURA, SHUJI
MORI, HIROSHI
YAMADA, KAZUHIRO
Author_xml – fullname: TAKEMURA, SHUJI
– fullname: YAMADA, KAZUHIRO
– fullname: MORI, HIROSHI
BookMark eNrjYmDJy89L5WSwDAjyd3YNDlZw8w9SALJdQp09_dwVgoGEj6uCc1BkcIijj4K_m0KAf4hjcLBnqK-Cn6e_k2OIKw8Da1piTnEqL5TmZlB0cw1x9tBNLciPTy0uSExOzUstifcOMjA0NjewMHVyMjQmRg0AsKkq3w
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
DocumentTitleAlternate 니오브산 칼륨 단결정 제조방법
Edition 6
ExternalDocumentID KR0137085BB1
GroupedDBID EVB
ID FETCH-epo_espacenet_KR0137085BB13
IEDL.DBID EVB
IngestDate Fri Jul 19 15:10:38 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
Korean
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_KR0137085BB13
Notes Application Number: KR19940022622
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980425&DB=EPODOC&CC=KR&NR=0137085B1
ParticipantIDs epo_espacenet_KR0137085BB1
PublicationCentury 1900
PublicationDate 19980425
PublicationDateYYYYMMDD 1998-04-25
PublicationDate_xml – month: 04
  year: 1998
  text: 19980425
  day: 25
PublicationDecade 1990
PublicationYear 1998
RelatedCompanies MITSUI PETROCHEMICAL INDUSTRIES LTD
RelatedCompanies_xml – name: MITSUI PETROCHEMICAL INDUSTRIES LTD
Score 2.4667847
Snippet 본 발명에 의하면 포타시움 니오베이트의 단결정의 한 C-평면상에 반절연물질층을 통해 또는 직접 양전극을 그리고 포타시움 니오베이트의 단결정의 다른 C-평면상에 반절연물질층을 통해 음전극을 배치하는 단계를 포함하며, 상기 양전극과 음전극은 서로 대향배치되며, 포타시움 니오베이트의...
SourceID epo
SourceType Open Access Repository
SubjectTerms AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Title PROCESS FOR PRODUCING SINGLE CRYSTAL OF POTASSIUM NIOBATE
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980425&DB=EPODOC&locale=&CC=KR&NR=0137085B1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFPVNp-LmBxGkb0Xn0q-HIm3aurm1KV0n82n0E4bQDVfx3_daV_VFX0JIIFyO_HJ3Se4XgBtFi3JEWiJmSaaIVJZiMcr6sijRqC8nsZSqNYGp68nDGX2aS_MWLJtcmJon9KMmR0REJYj3st6v1z-HWFb9tnJzGy-xafXghLolpE26WLUGBcvUbZ9bnAmM6eNA8AK9YtZD78LEQGmn8qIrmn372aySUta_LYpzCLs-DlaUR9B6XXVgnzUfr3Vgz93ed2N1C73NMWh-wBlqi2DYRrBuzdjIeyRTLCY2YcHLNDQmhDvE56GBW-TMJd6Im0Zon8C1Y4dsKKIMi-_5LsZBI63ZH5xCu1gV2RmQJFUijCjzgTbIqZpmGtp-NaWUJvld9VKwC72_x-n913kOB1-pdlS8ly6gXb69Z5doa8v4qtbSJ0RNfcM
link.rule.ids 230,309,786,891,25594,76906
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFOebTsXNrwjSt6Jz6ddDkTZt3Vy_6DqZT6WfMIRtuIr_vte6qi_6EkIC4XLkl7tLcr8A3EhKXCDSUj5Pc4mnopDwcT4QeYHGAzFNhEyuCUwdVxzN6NNcmLdg0eTC1DyhHzU5IiIqRbyX9X69_jnEMuq3lZvbZIFNqwcrVA0ua9LFqjXIGbpq-p7hMY4xdRJwbqBWzHroXegYKO1IFTlv5Tk961VSyvq3RbEOYNfHwZblIbReV13osObjtS7sOdv7bqxuobc5AsUPPIbaIhi2EawbMzZ2H8kUC9skLHiZhppNPIv4XqjhFjlziDv2dC00j-HaMkM24lGG6Hu-0SRopNUHwxNoL1fL_BRImkkxRpTFUBkWVM5yBW2_nFFK0-KueinYg_7f4_T_67yCzih07Mgeu5Mz2P9Ku6P8vXAO7fLtPb9Au1sml7XGPgFNSoCw
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=PROCESS+FOR+PRODUCING+SINGLE+CRYSTAL+OF+POTASSIUM+NIOBATE&rft.inventor=TAKEMURA%2C+SHUJI&rft.inventor=YAMADA%2C+KAZUHIRO&rft.inventor=MORI%2C+HIROSHI&rft.date=1998-04-25&rft.externalDBID=B1&rft.externalDocID=KR0137085BB1