PRODUCTION OF TARGET FOR SPUTTERING FE-SI-AL ALLOY

• Main Authors: ARIMA SHINICHI, OHASHI TAKEO, KUROKI MASAMI
• Format: Patent
• Language: English
• Published: 14.03.1989
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To prevent the cracking of 'SENDUST(R)' target during use by manufacturing the target to be used at the time of forming a thin magnetic film of 'SENDUST(R)' by sputtering on a nonmagnetic substrate, by pressing under specific conditions. CONSTITUTION:The thin magnetic film of 'SENDUST(R)' is formed by the sputtering method on the nonmagnetic substrate consisting of glass, etc., at the time of producing a core material for a magnetic head by the 'SENDUST(R)' which consists of 4-11wt.% Si, 2-8wt.% Al and the balance Fe and has extremely high magnetic permeability and magnetic flux density. The target is produced by subjecting the ingot of 'SENDUST(R)(R) to pressing at <=30% reduction ratio under the constant strain conditions of 950-1,100 deg.C, <=1X10<-2>S<-1> strain rate at the time of producing the target for forming the thin film of 'SENDUST(R)' at this time. The 'SENDUST(R)' target which has the equi-axed crystal structure of <=1mm grain size in crystal structure and does not crack during use is thus obtd.